| PART |
Description |
Maker |
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL |
8A, 600V Stealth Single Diode
8A, 600V Stealth Diode
8A, 600V Stealth⑩ Diode
8A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| ISL9R460S3ST ISL9R460S2 ISL9R460P2 ISL9R460S3S |
4A, 600V Stealth Single Diode
4A, 600V Stealth Diode
4A 600V Stealth Diode
4A, 600V Stealth⑩ Diode
4A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRG4PC50K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)
|
IRF[International Rectifier]
|
| IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| RURD660S9A RURD660 RURD660S RURD660S9ANL |
6A/ 600V Ultrafast Diodes
6A, 600V UltraFast Diode 6 A, 600 V, SILICON, RECTIFIER DIODE, TO-252
6A, 600V Ultrafast Diodes
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQU1N60C FQD1N60C FQD1N60CTF FQD1N60CTM FQU1N60CTU |
600V N-Channel Advance QFET C-Series
600V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| FCH041N60F |
N-Channel SuperFETII FRFETMOSFET 600V, 76A, 41m
600V N-Channel MOSFET, FRFET
|
Fairchild Semiconductor
|
| STGB7NB60KD STGD7NB60K STGP7NB60K STGP7NB60KDFP ST |
N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH?/a> IGBT
N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT
(STGD7NB60K / STGP7NB60K / STGB7NB60KD) N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH IGBT
N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESHIGBT N沟道A - 600V IGBT的TO-220/FP/DPAK/D2PAK PowerMESH
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| RHRP860CC FN3964 RHRP840CC |
8A, 400V - 600V Hyperfast Dual Diodes 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
8A/ 400V - 600V Hyperfast Dual Diodes
8A, 400V - 600V Hyperfast Dual Diodes(8A, 400V-600V 超快速二极管) 8 A, 400 V, SILICON, RECTIFIER DIODE
From old datasheet system
|
Intersil, Corp.
Intersil Corporation
|
